SK Hynix IncSecured ~70% of Nvidia's HBM orders for Vera Rubin platform; soaring demand and longer-term deals.
The DRAM – Roundhill Memory ETF, the first-ever memory ETF launched on April 2, has already more than doubled in value. The fund is heavily weighted toward the three largest DRAM makers—Micron Technology, SK Hynix, and Samsung—which together account for over 73% of its portfolio. Soaring demand for high-bandwidth memory used in AI chips has driven revenue and margins sharply higher across the sector, while the three companies have begun signing longer three- to five-year deals for the first time, potentially reducing the industry’s historical boom-and-bust cycles. The ETF also provides exposure to international names such as SK Hynix, which is set to debut ADRs on July 10 and has secured an estimated 70% of Nvidia’s HBM orders for its Vera Rubin platform, and Japanese NAND player Kioxia. Roundhill notes that the fund may use leverage and total return swaps for tax purposes and to gain additional exposure, and it offers a separate leveraged version called the Roundhill T-REX 2X Long DRAM Daily Target ETF for investors seeking higher risk.
SK Hynix IncSecured ~70% of Nvidia's HBM orders for Vera Rubin platform; soaring demand and longer-term deals.
Micron Technology IncSoaring demand for high-bandwidth memory used in AI chips drives revenue and margins higher; longer-term deals reduce cyclicality.
Mentioned as a Japanese NAND player in the ETF, benefiting from sector-wide demand.
Samsung Electronics Co LtdHeavy weighting in the ETF; benefits from soaring HBM demand and longer-term contracts.