Samsung Electronics Co LtdUnveiled industry-first zHBM and zNAND-O concept models, plus V10 BV-NAND with 400+ layers, showcasing advanced AI memory technology.

Samsung Electronics unveiled industry-first concept models of zHBM and zNAND-O at the Future of Memory and Storage 2026 conference in Santa Clara, California. The company also introduced its V10 BV-NAND with more than 400 layers, marking the first time wafer bonding technology has been applied to NAND. Samsung's AI memory roadmap spans next-generation solutions from DRAM to enterprise storage, including HBM4E, HBM5, LPDDR5X-PIM and PM1763. The zHBM architecture vertically stacks high-bandwidth memory directly above AI accelerators, aiming to deliver approximately eight times the performance of HBM5 while improving energy efficiency threefold and reducing thermal resistance by more than half. Samsung also showcased its one-stop turnkey solutions as the world's only integrated device manufacturer with capabilities spanning memory, foundry and advanced packaging.
Samsung Electronics Co LtdUnveiled industry-first zHBM and zNAND-O concept models, plus V10 BV-NAND with 400+ layers, showcasing advanced AI memory technology.