Samsung Electronics Co LtdSamsung unveiled next-gen memory tech (BV-NAND, zHBM, zNAND-0) for AI, boosting performance and density.

Samsung Electronics of South Korea announced next-generation memory semiconductor technology for artificial intelligence on the 4th. The technology unveiled is a prototype called V10 Bonding V-NAND, or BV-NAND, which adopts a new wafer bonding structure with over 400 layers, improving memory density by about 58 percent compared to the previous V9 NAND, while also enhancing read, write, and input-output performance. The company also showcased industry-first architecture prototypes for zHBM and zNAND-0, explaining that zHBM vertically stacks memory on top of an AI accelerator, achieving more than 10 times the memory density, three times the energy efficiency, and less than half the thermal resistance compared to conventional HBM5 memory.
Samsung Electronics Co LtdSamsung unveiled next-gen memory tech (BV-NAND, zHBM, zNAND-0) for AI, boosting performance and density.