SICC Wins Shandong Provincial Special Award for Scientific and Technological Progress, Leads Globally in 12-Inch Silicon Carbide Substrates

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The project "Key Technology R&D and Industrialization of Large-Size High-Quality Silicon Carbide Semiconductor Substrate Materials," led by SICC, has won the Special Award of the 2025 Shandong Provincial Science and Technology Progress Award, one of only two such awards in the province. The company has spent a decade deeply cultivating core technologies across the entire silicon carbide substrate chain, completely breaking overseas monopolies. It globally debuted 12-inch silicon carbide substrates in 2024 and completed the full series product breakthrough in 2025, propelling the industry into the 12-inch era. According to a March 2026 report by Japan's Fuji Keizai, SICC held a 27.6 percent share of the global conductive-type silicon carbide substrate market in 2025, ranking first, with a 51.3 percent global market share for high-end 8-inch substrates. In 2025, the company's R&D expenses reached 166 million yuan, a year-on-year increase of 16.91 percent, with continued investment in areas such as 12-inch industrialization. Leveraging features like high thermal conductivity and low loss, 12-inch substrates have successfully opened up two emerging markets each worth tens of billions of yuan: AI advanced packaging and computing power heat dissipation, and AR optics and automotive smart displays.

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Won provincial science award for 12-inch SiC substrate tech, breaking overseas monopoly and leading global market.

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