Atomera IncAtomera introduces MST technology to improve GaN-on-Silicon RF performance, enabling cost-effective high-performance solutions for 5G/6G.

Atomera has introduced a new approach using its proprietary MST technology to overcome performance barriers in GaN-on-Silicon for RF applications. The method inserts a thin, oxygen-modified layer into the silicon wafer, improving crystal quality and reducing parasitic channel losses that have historically limited high-frequency efficiency. Testing shows the technique reduces parasitic interface charge by over an order of magnitude and enables exceptional linearity at high power levels, allowing lower-cost GaN-on-Silicon devices to match the performance of more expensive technologies like RF SOI. The company expects this breakthrough to create significant growth opportunities by providing a cost-effective, high-performance solution for 5G, 6G, and future telecommunications infrastructure.
Atomera IncAtomera introduces MST technology to improve GaN-on-Silicon RF performance, enabling cost-effective high-performance solutions for 5G/6G.