Atomera Inc

Atomera reported clearing a significant manufacturing milestone with one of its two active gate-all-around customers, advancing toward potential in-fab licensing. The company also announced that its total addressable market for MST technology more than doubles with new applicability in NAND flash memory periphery circuits, driven by AI demand. In gallium nitride on silicon, RF test results showed linearity roughly 1,000 times better than reference substrates at benchmark drive levels, opening a potential new market for fully integrated RF front ends. For the second quarter of 2026, revenue was $158,000, and GAAP net loss was $6.3 million or $0.17 per share, compared to a net loss of $5 million or $0.17 per share in the second quarter of 2025. Non-GAAP operating expense guidance for 2026 was narrowed to the high end of the $18.25 million to $18.75 million range, reflecting rising costs in outsourced engineering and tool leases.

Atomera has introduced a new approach using its proprietary MST technology to overcome performance barriers in GaN-on-Silicon for RF applications. The method inserts a thin, oxygen-modified layer into the silicon wafer, improving crystal quality and reducing parasitic channel losses that have historically limited high-frequency efficiency. Testing shows the technique reduces parasitic interface charge by over an order of magnitude and enables exceptional linearity at high power levels, allowing lower-cost GaN-on-Silicon devices to match the performance of more expensive technologies like RF SOI. The company expects this breakthrough to create significant growth opportunities by providing a cost-effective, high-performance solution for 5G, 6G, and future telecommunications infrastructure.